Literature DB >> 17163719

Multiexciton generation by a single photon in nanocrystals.

A Shabaev1, Al L Efros, A J Nozik.   

Abstract

We have theoretically shown that efficient generation of multi-electron-hole pairs by a single photon observed recently in semiconductor nanocrystals1-4 is caused by breaking the single electron approximation for carriers with kinetic energy above the effective energy gap. Due to strong Coulomb interaction, these states form a coherent superposition with charged excitons of the same energy. This concept allows us to define the conditions for dominant two-exciton generations by a single photon: the thermalization rate of a single exciton, initiated by light, should be lower than both the two-exciton state thermalization rate and the rate of Coulomb coupling between single and two exciton states. Possible experimental manifestations of our model are discussed.

Year:  2006        PMID: 17163719     DOI: 10.1021/nl062059v

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  19 in total

1.  Step-like enhancement of luminescence quantum yield of silicon nanocrystals.

Authors:  D Timmerman; J Valenta; K Dohnalová; W D A M de Boer; T Gregorkiewicz
Journal:  Nat Nanotechnol       Date:  2011-10-09       Impact factor: 39.213

2.  Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals.

Authors:  W D A M de Boer; D Timmerman; K Dohnalová; I N Yassievich; H Zhang; W J Buma; T Gregorkiewicz
Journal:  Nat Nanotechnol       Date:  2010-11-28       Impact factor: 39.213

3.  Disentangling the effects of clustering and multi-exciton emission in second-order photon correlation experiments.

Authors:  Benjamin D Mangum; Yagnaseni Ghosh; Jennifer A Hollingsworth; Han Htoon
Journal:  Opt Express       Date:  2013-03-25       Impact factor: 3.894

4.  Correlated Single Quantum Dot Blinking and Interfacial Electron Transfer Dynamics.

Authors:  Shengye Jin; Jung-Cheng Hsiang; Haiming Zhu; Nianhui Song; Robert M Dickson; Tianquan Lian
Journal:  Chem Sci       Date:  2010-08-31       Impact factor: 9.825

5.  The energy barrier in singlet fission can be overcome through coherent coupling and entropic gain.

Authors:  Wai-Lun Chan; Manuel Ligges; X-Y Zhu
Journal:  Nat Chem       Date:  2012-08-19       Impact factor: 24.427

6.  Carrier multiplication in silicon nanocrystals: ab initio results.

Authors:  Ivan Marri; Marco Govoni; Stefano Ossicini
Journal:  Beilstein J Nanotechnol       Date:  2015-02-02       Impact factor: 3.649

7.  Highly efficient carrier multiplication in PbS nanosheets.

Authors:  Michiel Aerts; Thomas Bielewicz; Christian Klinke; Ferdinand C Grozema; Arjan J Houtepen; Juleon M Schins; Laurens D A Siebbeles
Journal:  Nat Commun       Date:  2014-04-30       Impact factor: 14.919

8.  Carrier multiplication detected through transient photocurrent in device-grade films of lead selenide quantum dots.

Authors:  Jianbo Gao; Andrew F Fidler; Victor I Klimov
Journal:  Nat Commun       Date:  2015-09-08       Impact factor: 14.919

9.  Ultrafast biexciton spectroscopy in semiconductor quantum dots: evidence for early emergence of multiple-exciton generation.

Authors:  Younghwan Choi; Sangwan Sim; Seong Chu Lim; Young Hee Lee; Hyunyong Choi
Journal:  Sci Rep       Date:  2013-11-13       Impact factor: 4.379

10.  Laser-induced greenish-blue photoluminescence of mesoporous silicon nanowires.

Authors:  Yan-Ru Choi; Minrui Zheng; Fan Bai; Junjun Liu; Eng-Soon Tok; Zhifeng Huang; Chorng-Haur Sow
Journal:  Sci Rep       Date:  2014-05-13       Impact factor: 4.379

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