Literature DB >> 17155701

Electron transport via local polarons at interface atoms.

M Berthe1, A Urbieta, L Perdigão, B Grandidier, D Deresmes, C Delerue, D Stiévenard, R Rurali, N Lorente, L Magaud, P Ordejón.   

Abstract

Electronic transport is profoundly modified in the presence of strong electron-vibration coupling. We show that in certain situations, the electron flow takes place only when vibrations are excited. By controlling the segregation of boron in semiconducting Si(111)-square root 3 x square root 3 R 30 degrees surfaces, we create a type of adatom with a dangling-bond state that is electronically decoupled from any other electronic state. However, probing this state with scanning tunnelling microscopy at 5 K yields high currents. These findings are rationalized by ab-initio calculations that show the formation of a local polaron in the transport process.

Entities:  

Year:  2006        PMID: 17155701     DOI: 10.1103/PhysRevLett.97.206801

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Time-resolved single dopant charge dynamics in silicon.

Authors:  Mohammad Rashidi; Jacob A J Burgess; Marco Taucer; Roshan Achal; Jason L Pitters; Sebastian Loth; Robert A Wolkow
Journal:  Nat Commun       Date:  2016-10-26       Impact factor: 14.919

  1 in total

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