| Literature DB >> 17155336 |
Q Xu1, I D Sharp, C W Yuan, D O Yi, C Y Liao, A M Glaeser, A M Minor, J W Beeman, M C Ridgway, P Kluth, J W Ager, D C Chrzan, E E Haller.
Abstract
The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.Entities:
Year: 2006 PMID： 17155336 DOI： 10.1103/PhysRevLett.97.155701
Source DB: PubMed Journal: Phys Rev Lett ISSN： 0031-9007 Impact factor: 9.161