Literature DB >> 17155283

Weak-localization magnetoresistance and valley symmetry in graphene.

E McCann1, K Kechedzhi, Vladimir I Fal'ko, H Suzuura, T Ando, B L Altshuler.   

Abstract

Because of the chiral nature of electrons in a monolayer of graphite (graphene) one can expect weak antilocalization and a positive weak-field magnetoresistance in it. However, trigonal warping (which breaks p-->-p symmetry of the Fermi line in each valley) suppresses antilocalization, while intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore conventional negative magnetoresistance. We show this by evaluating the dependence of the magnetoresistance of graphene on relaxation rates associated with various possible ways of breaking a "hidden" valley symmetry of the system.

Entities:  

Year:  2006        PMID: 17155283     DOI: 10.1103/PhysRevLett.97.146805

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  24 in total

1.  Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC.

Authors:  Chieh-Wen Liu; Chiashain Chuang; Yanfei Yang; Randolph E Elmquist; Yi-Ju Ho; Hsin-Yen Lee; Chi-Te Liang
Journal:  2d Mater       Date:  2017-01-25       Impact factor: 7.103

2.  Formation of unconventional standing waves at graphene edges by valley mixing and pseudospin rotation.

Authors:  Changwon Park; Heejun Yang; Andrew J Mayne; Gérald Dujardin; Sunae Seo; Young Kuk; Jisoon Ihm; Gunn Kim
Journal:  Proc Natl Acad Sci U S A       Date:  2011-11-02       Impact factor: 11.205

3.  Temperature-field phase diagram of extreme magnetoresistance.

Authors:  Fazel Fallah Tafti; Quinn Gibson; Satya Kushwaha; Jason W Krizan; Neel Haldolaarachchige; Robert Joseph Cava
Journal:  Proc Natl Acad Sci U S A       Date:  2016-06-07       Impact factor: 11.205

4.  Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition.

Authors:  Qingkai Yu; Luis A Jauregui; Wei Wu; Robert Colby; Jifa Tian; Zhihua Su; Helin Cao; Zhihong Liu; Deepak Pandey; Dongguang Wei; Ting Fung Chung; Peng Peng; Nathan P Guisinger; Eric A Stach; Jiming Bao; Shin-Shem Pei; Yong P Chen
Journal:  Nat Mater       Date:  2011-05-08       Impact factor: 43.841

5.  High-performance top-gated graphene-nanoribbon transistors using zirconium oxide nanowires as high-dielectric-constant gate dielectrics.

Authors:  Lei Liao; Jingwei Bai; Yung-Chen Lin; Yongquan Qu; Yu Huang; Xiangfeng Duan
Journal:  Adv Mater       Date:  2010-05-04       Impact factor: 30.849

6.  Towards a quantum resistance standard based on epitaxial graphene.

Authors:  Alexander Tzalenchuk; Samuel Lara-Avila; Alexei Kalaboukhov; Sara Paolillo; Mikael Syväjärvi; Rositza Yakimova; Olga Kazakova; T J B M Janssen; Vladimir Fal'ko; Sergey Kubatkin
Journal:  Nat Nanotechnol       Date:  2010-01-17       Impact factor: 39.213

7.  Strong interface-induced spin-orbit interaction in graphene on WS2.

Authors:  Zhe Wang; Dong-Keun Ki; Hua Chen; Helmuth Berger; Allan H MacDonald; Alberto F Morpurgo
Journal:  Nat Commun       Date:  2015-09-22       Impact factor: 14.919

8.  Universal Conductance Fluctuation in Two-Dimensional Topological Insulators.

Authors:  Duk-Hyun Choe; K J Chang
Journal:  Sci Rep       Date:  2015-06-09       Impact factor: 4.379

9.  Dirac fermion heating, current scaling, and direct insulator-quantum Hall transition in multilayer epitaxial graphene.

Authors:  Fan-Hung Liu; Chang-Shun Hsu; Chiashain Chuang; Tak-Pong Woo; Lung-I Huang; Shun-Tsung Lo; Yasuhiro Fukuyama; Yanfei Yang; Randolph E Elmquist; Chi-Te Liang
Journal:  Nanoscale Res Lett       Date:  2013-08-22       Impact factor: 4.703

10.  High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen.

Authors:  E Pallecchi; F Lafont; V Cavaliere; F Schopfer; D Mailly; W Poirier; A Ouerghi
Journal:  Sci Rep       Date:  2014-04-02       Impact factor: 4.379

View more

北京卡尤迪生物科技股份有限公司 © 2022-2023.