Literature DB >> 17155277

Evidence for a neutral grain-boundary barrier in chalcopyrites.

Susanne Siebentritt1, Sascha Sadewasser, Mark Wimmer, Caspar Leendertz, Tobias Eisenbarth, Martha Ch Lux-Steiner.   

Abstract

Single grain boundaries in CuGaSe2 have been grown epitaxially. Hall measurements indicate a barrier of 30-40 meV to majority carrier transport. Nevertheless, local surface potential measurements show the absence of space charge around the grain boundary; i.e., it is neutral. Theoretical calculations [Persson and Zunger, Phys. Rev. Lett. 91, 266401 (2003)] have predicted a neutral barrier for the present Sigma3 grain boundary. Thus, we have experimentally shown the existence of a neutral grain-boundary barrier, however, smaller than theoretically predicted.

Year:  2006        PMID: 17155277     DOI: 10.1103/PhysRevLett.97.146601

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Effect of the KF post-deposition treatment on grain boundary properties in Cu(In, Ga)Se2 thin films.

Authors:  N Nicoara; Th Lepetit; L Arzel; S Harel; N Barreau; S Sadewasser
Journal:  Sci Rep       Date:  2017-01-27       Impact factor: 4.379

  1 in total

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