Literature DB >> 17073502

N3-sensitized TiO2 films: in situ proton exchange toward open-circuit photovoltage enhancement.

Zhong-Sheng Wang1, Hideki Sugihara.   

Abstract

Protons of N3, cis-bis(thiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylic acid)ruthenium(II), were in situ exchanged on N3-loaded TiO2 films with alkali-metal, tetrabutylammonium, and guanidinium cations. This simple strategy improved the open-circuit photovoltage (V(oc)) significantly, resulting in enhancement of the power conversion efficiency by 10-25%. Electrochemical impedance spectra revealed that the in situ proton exchange of the N3-loaded film suppressed charge recombination between injected electrons and I(3-) ions in the electrolyte, which, together with the negative shift of the conduction band edge for TiO2, may account for the remarkably increased V(oc) upon proton exchange of N3.

Entities:  

Year:  2006        PMID: 17073502     DOI: 10.1021/la061315g

Source DB:  PubMed          Journal:  Langmuir        ISSN: 0743-7463            Impact factor:   3.882


  1 in total

1.  Chemisorption of Atomically Precise 42-Carbon Graphene Quantum Dots on Metal Oxide Films Greatly Accelerates Interfacial Electron Transfer.

Authors:  Peng Han; Ian Cheng-Yi Hou; Hao Lu; Xiao-Ye Wang; Klaus Müllen; Mischa Bonn; Akimitsu Narita; Enrique Cánovas
Journal:  J Phys Chem Lett       Date:  2019-03-13       Impact factor: 6.475

  1 in total

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