Band-gap engineering of metal oxides for dye-sensitized solar cells.

Mixed oxides Ti(1-x)Zr(x)O2 with 0 < x < or = 0.2 were synthesized by means of thermal hydrolysis for use in dye-sensitized solar cells. The lattice parameter d is observed to increase linearly with Zr content x. The band gap of the mixed oxides was measured to increase by up to 0.2 eV. The respective shift of the conduction band edge leads to an increase of the open circuit voltage (V(OC)) by up to 0.1 V. Among others, temperature-dependent measurements of V(OC) clearly identify the correlation between band edge shift and change in V(OC).