Literature DB >> 17025928

Large excitonic enhancement of optical refrigeration in semiconductors.

G Rupper1, N H Kwong, R Binder.   

Abstract

We present a theoretical analysis for laser cooling of bulk GaAs based on a microscopic many-particle theory of absorption and luminescence of a partially ionized electron-hole plasma. Our cooling threshold analysis shows that, at low temperatures, the presence of the excitonic resonance in the luminescence is essential in competing against heating losses. The theory includes self-consistent energy renormalizations and line broadenings from both instantaneous mean-field and frequency-dependent carrier-carrier correlations, and it is applicable from the few-Kelvin regime to above room temperature.

Entities:  

Year:  2006        PMID: 17025928     DOI: 10.1103/PhysRevLett.97.117401

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Laser cooling of a semiconductor by 40 kelvin.

Authors:  Jun Zhang; Dehui Li; Renjie Chen; Qihua Xiong
Journal:  Nature       Date:  2013-01-24       Impact factor: 49.962

2.  X-ray pump optical probe cross-correlation study of GaAs.

Authors:  S M Durbin; T Clevenger; T Graber; R Henning
Journal:  Nat Photonics       Date:  2012-01-15       Impact factor: 38.771

3.  Room temperature multi-phonon upconversion photoluminescence in monolayer semiconductor WS2.

Authors:  J Jadczak; L Bryja; J Kutrowska-Girzycka; P Kapuściński; M Bieniek; Y-S Huang; P Hawrylak
Journal:  Nat Commun       Date:  2019-01-10       Impact factor: 14.919

  3 in total

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