Literature DB >> 16907512

Pressure-induced site-selective disordering of Ge2Sb2Te5: a new insight into phase-change optical recording.

A V Kolobov1, J Haines, A Pradel, M Ribes, P Fons, J Tominaga, Y Katayama, T Hammouda, T Uruga.   

Abstract

We demonstrate that , the material of choice in phase-change optical recording (such as DVD-RAM), can be rendered amorphous by the application of hydrostatic pressure. It is argued that this structural change is due to a very strong second-nearest-neighbor Te-Te interaction that determines the long-range order in the metastable cubic phase of and also to the presence of vacancies. This newly discovered phenomenon suggests that pressure is an important factor for the formation of the amorphous phase which opens new insight into the mechanism of phase-change optical recording.

Entities:  

Year:  2006        PMID: 16907512     DOI: 10.1103/PhysRevLett.97.035701

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  8 in total

1.  Peierls distortion mediated reversible phase transition in GeTe under pressure.

Authors:  Zhimei Sun; Jian Zhou; Ho-Kwang Mao; Rajeev Ahuja
Journal:  Proc Natl Acad Sci U S A       Date:  2012-04-02       Impact factor: 11.205

2.  Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy.

Authors:  M Xu; Y Q Cheng; L Wang; H W Sheng; Y Meng; W G Yang; X D Han; E Ma
Journal:  Proc Natl Acad Sci U S A       Date:  2012-04-16       Impact factor: 11.205

3.  Size-dependent chemical transformation, structural phase-change, and optical properties of nanowires.

Authors:  Brian Piccione; Rahul Agarwal; Yeonwoong Jung; Ritesh Agarwal
Journal:  Philos Mag (Abingdon)       Date:  2013       Impact factor: 1.864

4.  Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials.

Authors:  Dmitry Shakhvorostov; Razvan A Nistor; Lia Krusin-Elbaum; Glenn J Martyna; Dennis M Newns; Bruce G Elmegreen; Xiao-hu Liu; Zak E Hughes; Sujata Paul; Cyril Cabral; Simone Raoux; David B Shrekenhamer; Dimitri N Basov; Young Song; Martin H Müser
Journal:  Proc Natl Acad Sci U S A       Date:  2009-06-22       Impact factor: 11.205

5.  Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material.

Authors:  Zhimei Sun; Jian Zhou; Yuanchun Pan; Zhitang Song; Ho-Kwang Mao; Rajeev Ahuja
Journal:  Proc Natl Acad Sci U S A       Date:  2011-06-13       Impact factor: 11.205

6.  Disorder Control in Crystalline GeSb2Te4 Using High Pressure.

Authors:  Ming Xu; Wei Zhang; Riccardo Mazzarello; Matthias Wuttig
Journal:  Adv Sci (Weinh)       Date:  2015-06-30       Impact factor: 16.806

7.  Size-dependent and tunable crystallization of GeSbTe phase-change nanoparticles.

Authors:  Bin Chen; Gert H Ten Brink; George Palasantzas; Bart J Kooi
Journal:  Sci Rep       Date:  2016-12-20       Impact factor: 4.379

8.  Composition dependent structural phase transition and optical band gap tuning in InSe thin films.

Authors:  Harpreet Singh; Palwinder Singh; Randhir Singh; Jeewan Sharma; A P Singh; Akshay Kumar; Anup Thakur
Journal:  Heliyon       Date:  2019-11-30
  8 in total

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