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Literature DB >> 16840688

Applied physics. Tunneling across a ferroelectric.

Evgeny Y Tsymbal¹, Hermann Kohlstedt.

Abstract

Year: 2006 PMID： 16840688 DOI： 10.1126/science.1126230

Source DB: PubMed Journal: Science ISSN： 0036-8075 Impact factor: 47.728

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52 in total

1. Revealing the role of defects in ferroelectric switching with atomic resolution.

Authors: Peng Gao; Christopher T Nelson; Jacob R Jokisaari; Seung-Hyub Baek; Chung Wung Bark; Yi Zhang; Enge Wang; Darrell G Schlom; Chang-Beom Eom; Xiaoqing Pan
Journal: Nat Commun Date: 2011-12-20 Impact factor: 14.919

2. Solid-state memories based on ferroelectric tunnel junctions.

Authors: André Chanthbouala; Arnaud Crassous; Vincent Garcia; Karim Bouzehouane; Stéphane Fusil; Xavier Moya; Julie Allibe; Bruno Dlubak; Julie Grollier; Stéphane Xavier; Cyrile Deranlot; Amir Moshar; Roger Proksch; Neil D Mathur; Manuel Bibes; Agnès Barthélémy
Journal: Nat Nanotechnol Date: 2011-12-04 Impact factor: 39.213

3. Nanoelectronics: Ferroelectric devices show potential.

Authors: Adrian M Ionescu
Journal: Nat Nanotechnol Date: 2012-02-06 Impact factor: 39.213

4. Interface control of bulk ferroelectric polarization.

Authors: P Yu; W Luo; D Yi; J X Zhang; M D Rossell; C-H Yang; L You; G Singh-Bhalla; S Y Yang; Q He; Q M Ramasse; R Erni; L W Martin; Y H Chu; S T Pantelides; S J Pennycook; R Ramesh
Journal: Proc Natl Acad Sci U S A Date: 2012-05-30 Impact factor: 11.205

Applied physics. Tunneling across a ferroelectric.

1. Revealing the role of defects in ferroelectric switching with atomic resolution.

2. Solid-state memories based on ferroelectric tunnel junctions.

3. Nanoelectronics: Ferroelectric devices show potential.

4. Interface control of bulk ferroelectric polarization.

5. Robust isothermal electric control of exchange bias at room temperature.

6. Giant tunnel electroresistance for non-destructive readout of ferroelectric states.

7. Applied physics: A leak of information.

8. Deterministic control of ferroelastic switching in multiferroic materials.

Review 9. Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications.

10. Reversible electrical switching of spin polarization in multiferroic tunnel junctions.