Reversible adduct formation of trimethylgallium and trimethylindium with ammonia.

We have used gas-phase infrared spectroscopy to determine the equilibrium constant (K(p)) for the formation of (CH(3))(3)Ga:NH(3) and (CH(3))(3)In:NH(3) adducts in the 80-230 degrees C range. In this temperature range, and at reactant concentrations typically used for metal organic chemical vapor deposition, the dominant chemical reaction is reversible adduct formation/dissociation. Reaction enthalpies and entropies are extracted from the temperature dependence of K(p), yielding DeltaH(Ga) = -16.3 +/- 0.5 kcal/mol, DeltaS(Ga) = -32.4 +/- 1.2 eu, and DeltaH(In) = -15.0 +/- 0.6 kcal/mol, DeltaS(In) = -30.3 +/- 1.4 eu. These results will aid current and future modeling efforts, as well as advance our general understanding of the group-III nitride deposition process.