| Literature DB >> 16834345 |
Hossam Haick1, Patrick T Hurley, Allon I Hochbaum, Peidong Yang, Nathan S Lewis.
Abstract
Silicon nanowires (Si NWs) modified by covalent Si-CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on-off ratios in excess of 105 over a relatively small gate voltage swing (+/-2 V).Entities:
Year: 2006 PMID： 16834345 DOI： 10.1021/ja056785w
Source DB: PubMed Journal: J Am Chem Soc ISSN： 0002-7863 Impact factor: 15.419