| Literature DB >> 16803328 |
G Costantini1, A Rastelli, C Manzano, P Acosta-Diaz, R Songmuang, G Katsaros, O G Schmidt, K Kern.
Abstract
A microscopic picture for the GaAs overgrowth of self-organized quantum dots is developed. Scanning tunneling microscopy measurements reveal two capping regimes: the first being characterized by a dot shrinking and a backward pyramid-to-dome shape transition. This regime is governed by fast dynamics resulting in island morphologies close to thermodynamic equilibrium. The second regime is marked by a true overgrowth and is controlled by kinetically limited surface diffusion processes. A simple model is developed to describe the observed structural changes which are rationalized in terms of energetic minimization driven by lattice mismatch and alloying.Year: 2006 PMID: 16803328 DOI: 10.1103/PhysRevLett.96.226106
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161