| Literature DB >> 16712004 |
C González1, F Flores, J Ortega.
Abstract
The In/Si(111)-(4 x 1) surface is a paradigmatic example of a quasi-one-dimensional system showing a reversible structural and electronic (metal-insulator) phase transition when the temperature is lowered. In this work, we use first-principles simulation techniques to uncover the atomic and electronic origin of this controversial transition. Our calculations show that the ground state consists of insulating (4 x 2) indium chains with a weak interchain coupling that induces opposite shear distortions in alternate chains. First-principles molecular dynamics simulations show that the (4 x 1) <--> (8 x 2) phase transition is due to the "dynamical fluctuations" the system undergoes when, at high temperature, it fluctuates chaotically between degenerate ground states. The metallicity of the In/Si(111)-(4 x 1) surface is related to the low energy cost for the shear distortion.Entities:
Year: 2006 PMID: 16712004 DOI: 10.1103/PhysRevLett.96.136101
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161