| Literature DB >> 16683829 |
Henrik T A Brenning1, Sergey E Kubatkin, Donats Erts, Sergey G Kafanov, Thilo Bauch, Per Delsing.
Abstract
We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor (SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken.Mesh:
Year: 2006 PMID: 16683829 DOI: 10.1021/nl052526t
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189