Literature DB >> 16683829

A single electron transistor on an atomic force microscope probe.

Henrik T A Brenning1, Sergey E Kubatkin, Donats Erts, Sergey G Kafanov, Thilo Bauch, Per Delsing.   

Abstract

We report fabrication as well as proof-of-concept experiments of a noninvasive sensor of weak nanoscale electric fields. The sensor is a single electron transistor (SET) placed at the tip of a noncontact atomic force microscope (AFM). This is a general technology to make any nanometer-sized lithography pattern at edges or tips of a cantilever. The height control of the AFM allows the SET to hover a few nanometers above the substrate, improving both the electric field sensitivity and lateral resolution of the electrometer. Our AFM-SET sensor is prepared by a scalable technology. It means that the probe can be routinely fabricated and replaced, if broken.

Mesh:

Year:  2006        PMID: 16683829     DOI: 10.1021/nl052526t

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  3 in total

1.  Gate reflectometry of single-electron box arrays using calibrated low temperature matching networks.

Authors:  Matthew J Filmer; Matthew Huebner; Thomas A Zirkle; Xavier Jehl; Marc Sanquer; Jonathan D Chisum; Alexei O Orlov; Gregory L Snider
Journal:  Sci Rep       Date:  2022-02-23       Impact factor: 4.996

2.  Direct-write nanoscale printing of nanogranular tunnelling strain sensors for sub-micrometre cantilevers.

Authors:  Maja Dukic; Marcel Winhold; Christian H Schwalb; Jonathan D Adams; Vladimir Stavrov; Michael Huth; Georg E Fantner
Journal:  Nat Commun       Date:  2016-09-26       Impact factor: 14.919

3.  Piezoresistive AFM cantilevers surpassing standard optical beam deflection in low noise topography imaging.

Authors:  Maja Dukic; Jonathan D Adams; Georg E Fantner
Journal:  Sci Rep       Date:  2015-11-17       Impact factor: 4.379

  3 in total

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