| Literature DB >> 16606013 |
Colin L Freeman1, Frederik Claeyssens, Neil L Allan, John H Harding.
Abstract
Periodic ab initio density functional calculations on ultrathin films of AlN, BeO, GaN, SiC, ZnO, and ZnS demonstrate the stabilization of thicker films terminating with the polar {0001} surface via charge transfer and metallization of the surface layers. In contrast thinner films remove the dipole by adopting a graphiticlike structure in which the atoms are threefold coordinate. This structure is thermodynamically the most favorable for these thinner films. Implications for the crystal growth of wurtzite materials are discussed.Entities:
Year: 2006 PMID: 16606013 DOI: 10.1103/PhysRevLett.96.066102
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161