Literature DB >> 16605790

Ionic polarizability of conductive metal oxides and critical thickness for ferroelectricity in BaTiO3.

G Gerra1, A K Tagantsev, N Setter, K Parlinski.   

Abstract

We report a first-principles investigation of ultrathin BaTiO(3) films with SrRuO(3) electrodes. We find that the ionic relaxations in the metal-oxide electrode play a crucial role in stabilizing the ferroelectric phase. Comparison with frozen-phonon calculations shows that the degree of softness of the SrRuO(3) lattice has an essential impact on the screening of ferroelectric polarization in BaTiO(3). The critical thickness for ferroelectricity in BaTiO(3) is found to be 1.2 nm. The results of our calculations provide a possible explanation for the beneficial impact of oxide electrodes on the switching and dielectric properties of ferroelectric capacitors.

Entities:  

Year:  2006        PMID: 16605790     DOI: 10.1103/PhysRevLett.96.107603

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  8 in total

1.  Enhancement of ferroelectricity at metal-oxide interfaces.

Authors:  Massimiliano Stengel; David Vanderbilt; Nicola A Spaldin
Journal:  Nat Mater       Date:  2009-04-19       Impact factor: 43.841

2.  Possible absence of critical thickness and size effect in ultrathin perovskite ferroelectric films.

Authors:  Peng Gao; Zhangyuan Zhang; Mingqiang Li; Ryo Ishikawa; Bin Feng; Heng-Jui Liu; Yen-Lin Huang; Naoya Shibata; Xiumei Ma; Shulin Chen; Jingmin Zhang; Kaihui Liu; En-Ge Wang; Dapeng Yu; Lei Liao; Ying-Hao Chu; Yuichi Ikuhara
Journal:  Nat Commun       Date:  2017-06-06       Impact factor: 14.919

3.  Single-domain multiferroic BiFeO3 films.

Authors:  C-Y Kuo; Z Hu; J C Yang; S-C Liao; Y L Huang; R K Vasudevan; M B Okatan; S Jesse; S V Kalinin; L Li; H J Liu; C-H Lai; T W Pi; S Agrestini; K Chen; P Ohresser; A Tanaka; L H Tjeng; Y H Chu
Journal:  Nat Commun       Date:  2016-09-01       Impact factor: 14.919

4.  Giant magnetoelectric effect at the graphone/ferroelectric interface.

Authors:  Jie Wang; Yajun Zhang; M P K Sahoo; Takahiro Shimada; Takayuki Kitamura; Philippe Ghosez; Tong-Yi Zhang
Journal:  Sci Rep       Date:  2018-08-20       Impact factor: 4.379

5.  Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit.

Authors:  H Wang; Z R Liu; H Y Yoong; T R Paudel; J X Xiao; R Guo; W N Lin; P Yang; J Wang; G M Chow; T Venkatesan; E Y Tsymbal; H Tian; J S Chen
Journal:  Nat Commun       Date:  2018-08-20       Impact factor: 14.919

6.  Low value for the static background dielectric constant in epitaxial PZT thin films.

Authors:  Georgia Andra Boni; Cristina Florentina Chirila; Luminita Hrib; Raluca Negrea; Lucian Dragos Filip; Ioana Pintilie; Lucian Pintilie
Journal:  Sci Rep       Date:  2019-10-11       Impact factor: 4.379

7.  First-principles study of interface doping in ferroelectric junctions.

Authors:  Pin-Zhi Wang; Tian-Yi Cai; Sheng Ju; Yin-Zhong Wu
Journal:  Sci Rep       Date:  2016-04-11       Impact factor: 4.379

8.  High stability of electro-transport and magnetism against the A-site cation disorder in SrRuO3.

Authors:  Y L Wang; M F Liu; R Liu; Y L Xie; X Li; Z B Yan; J-M Liu
Journal:  Sci Rep       Date:  2016-06-14       Impact factor: 4.379

  8 in total

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