| Literature DB >> 16573106 |
Valery V Konovalov1, Andrew Melo, Shane A Catledge, Shafiul Chowdhury, Yogesh K Vohra.
Abstract
Addition of He to a high CH4 content (10.7 vol%) H2/CH4/N2 feedgas mixture for microwave plasma chemical vapor deposition produced hard (58-72 GPa), ultra-smooth nanostructured diamond films on Ti-6AI-4V alloy substrates. Upon increase in He content up to 71 vol%, root mean squared (RMS) surface roughness of the film decreased to 9-10 nm and average diamond grain size to 5-6 nm. Our studies show that increased nanocrystallinity with He addition in plasma is related to plasma dilution, enhanced fragmentation of carbon containing species, and enhanced formation of CN radical.Entities:
Mesh:
Substances:
Year: 2006 PMID: 16573106 PMCID: PMC2430513
Source DB: PubMed Journal: J Nanosci Nanotechnol ISSN: 1533-4880