Literature DB >> 16486951

Structure of phase change materials for data storage.

Zhimei Sun1, Jian Zhou, Rajeev Ahuja.   

Abstract

Phase change materials based on chalcogenide alloys play an important role in optical and electrical memory devices. Both applications rely on the reversible phase transition of these alloys between amorphous and metastable cubic states. However, their atomic arrangements are not yet clear, which results in the unknown phase change mechanism of the utilization. Here using ab initio calculations we have determined the atomic arrangements. The results show that the metastable structure consists of special repeated units possessing rocksalt symmetry, whereas the so-called vacancy positions are highly ordered and layered and just result from the cubic symmetry. Finally, the fast and reversible phase change comes from the intrinsic similarity in the structures of the amorphous and metastable states.

Year:  2006        PMID: 16486951     DOI: 10.1103/PhysRevLett.96.055507

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  13 in total

1.  Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy.

Authors:  M Xu; Y Q Cheng; L Wang; H W Sheng; Y Meng; W G Yang; X D Han; E Ma
Journal:  Proc Natl Acad Sci U S A       Date:  2012-04-16       Impact factor: 11.205

2.  Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials.

Authors:  Dmitry Shakhvorostov; Razvan A Nistor; Lia Krusin-Elbaum; Glenn J Martyna; Dennis M Newns; Bruce G Elmegreen; Xiao-hu Liu; Zak E Hughes; Sujata Paul; Cyril Cabral; Simone Raoux; David B Shrekenhamer; Dimitri N Basov; Young Song; Martin H Müser
Journal:  Proc Natl Acad Sci U S A       Date:  2009-06-22       Impact factor: 11.205

3.  Pressure-induced reversible amorphization and an amorphous-amorphous transition in Ge₂Sb₂Te₅ phase-change memory material.

Authors:  Zhimei Sun; Jian Zhou; Yuanchun Pan; Zhitang Song; Ho-Kwang Mao; Rajeev Ahuja
Journal:  Proc Natl Acad Sci U S A       Date:  2011-06-13       Impact factor: 11.205

4.  Ultrafast time-resolved electron diffraction revealing the nonthermal dynamics of near-UV photoexcitation-induced amorphization in Ge2Sb2Te5.

Authors:  Masaki Hada; Wataru Oba; Masashi Kuwahara; Ikufumi Katayama; Toshiharu Saiki; Jun Takeda; Kazutaka G Nakamura
Journal:  Sci Rep       Date:  2015-08-28       Impact factor: 4.379

5.  Structural transition and enhanced phase transition properties of Se doped Ge₂Sb₂Te₅ alloys.

Authors:  E M Vinod; K Ramesh; K S Sangunni
Journal:  Sci Rep       Date:  2015-01-30       Impact factor: 4.379

6.  Holographic image generation with a thin-film resonance caused by chalcogenide phase-change material.

Authors:  Seung-Yeol Lee; Yong-Hae Kim; Seong-M Cho; Gi Heon Kim; Tae-Youb Kim; Hojun Ryu; Han Na Kim; Han Byeol Kang; Chi-Young Hwang; Chi-Sun Hwang
Journal:  Sci Rep       Date:  2017-01-24       Impact factor: 4.379

7.  Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Authors:  Valeria Bragaglia; Fabrizio Arciprete; Wei Zhang; Antonio Massimiliano Mio; Eugenio Zallo; Karthick Perumal; Alessandro Giussani; Stefano Cecchi; Jos Emiel Boschker; Henning Riechert; Stefania Privitera; Emanuele Rimini; Riccardo Mazzarello; Raffaella Calarco
Journal:  Sci Rep       Date:  2016-04-01       Impact factor: 4.379

8.  Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe.

Authors:  Bin Zhang; Xue-Peng Wang; Zhen-Ju Shen; Xian-Bin Li; Chuan-Shou Wang; Yong-Jin Chen; Ji-Xue Li; Jin-Xing Zhang; Ze Zhang; Sheng-Bai Zhang; Xiao-Dong Han
Journal:  Sci Rep       Date:  2016-05-03       Impact factor: 4.379

9.  Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures.

Authors:  Andriy Lotnyk; Ulrich Ross; Sabine Bernütz; Erik Thelander; Bernd Rauschenbach
Journal:  Sci Rep       Date:  2016-05-25       Impact factor: 4.379

10.  Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film.

Authors:  Yonghui Zheng; Yan Cheng; Rong Huang; Ruijuan Qi; Feng Rao; Keyuan Ding; Weijun Yin; Sannian Song; Weili Liu; Zhitang Song; Songlin Feng
Journal:  Sci Rep       Date:  2017-07-19       Impact factor: 4.379

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