SiO2 nanowires growing on hexagonally arranged circular patterns surrounded by TiO2 films.

An effective approach has been demonstrated for the synthesis of novel composite architectures, SiO2 nanowires (NWs) growing on hexagonally arranged circular patterns surrounded by TiO2 films on Si substrate. First, a solution-dipping template strategy is used to create TiO2 films with hexagonally arranged pores on Au-coated Si substrate, resulting in hexagonally arranged circular patterns of catalysts surrounded by TiO2 films. Then the patterned catalysts guide the growth of SiO2 NWs with the original TiO2 films preserved, realizing the composite structures. Such composite architectures combine the photoluminescence (PL) properties of the two components, and also present more favorable PL property, laying a foundation for future advanced nano-optoelectronic devices.