| Literature DB >> 16384003 |
M W Haverkort1, Z Hu, A Tanaka, W Reichelt, S V Streltsov, M A Korotin, V I Anisimov, H H Hsieh, H-J Lin, C T Chen, D I Khomskii, L H Tjeng.
Abstract
We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2,3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.Entities:
Year: 2005 PMID: 16384003 DOI: 10.1103/PhysRevLett.95.196404
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161