| Literature DB >> 16351209 |
Jiesheng Wang1, Vijaya K Kayastha, Yoke Khin Yap, Zhiyong Fan, Jia G Lu, Zhengwei Pan, Ilia N Ivanov, Alex A Puretzky, David B Geohegan.
Abstract
High growth temperatures (>1100 degrees C), low production yield, and impurities have prevented research progress and applications of boron nitride nanotubes (BNNTs) in the past 10 years. Here, we show that BNNTs can be grown on substrates at 600 degrees C. These BNNTs are constructed of high-order tubular structures and can be used without purification. Tunneling spectroscopy indicates that their band gap ranges from 4.4 to 4.9 eV.Entities:
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Year: 2005 PMID： 16351209 DOI： 10.1021/nl051859n
Source DB: PubMed Journal: Nano Lett ISSN： 1530-6984 Impact factor: 11.189