Literature DB >> 16294967

Influence of thermal annealing and ultraviolet light irradiation on LaF3 thin films at 193 nm.

Cheng-Chung Lee1, Ming-Chung Liu, Masaaki Kaneko, Kazuhide Nakahira, Yuuichi Takano.   

Abstract

Lanthanum fluoride (LaF3) thin films were prepared by resistive heating evaporation and electron-beam gun evaporation under the same deposition rate, deposition substrate temperature, and vacuum pressure. The coated LaF3 films were then treated by heat annealing and UV light irradiation. The optical properties, microstructures, stress, and laser-induced damage threshold (LIDT) at a wavelength of 193 nm were investigated. The surface roughness, optical loss, stress, and LIDT of the films were improved after the annealing. The films had better properties when irradiated by UV light as compared with heat annealing.

Entities:  

Year:  2005        PMID: 16294967     DOI: 10.1364/ao.44.006921

Source DB:  PubMed          Journal:  Appl Opt        ISSN: 1559-128X            Impact factor:   1.980


  1 in total

1.  UV-irradiated sol-gel spin coated AZO thin films: enhanced optoelectronic properties.

Authors:  Md Irfan Khan; Tasratur Reaj Neha; Md Muktadir Billah
Journal:  Heliyon       Date:  2022-01-11
  1 in total

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