Literature DB >> 16241829

Theory of spin hall conductivity in n-doped GaAs.

Hans-Andreas Engel1, Bertrand I Halperin, Emmanuel I Rashba.   

Abstract

We develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew-scattering and side-jump contributions to the spin-Hall conductivity. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with experiments by Kato et al. [Science 306, 1910 (2004)].

Year:  2005        PMID: 16241829     DOI: 10.1103/PhysRevLett.95.166605

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Electric control of the spin Hall effect by intervalley transitions.

Authors:  N Okamoto; H Kurebayashi; T Trypiniotis; I Farrer; D A Ritchie; E Saitoh; J Sinova; J Mašek; T Jungwirth; C H W Barnes
Journal:  Nat Mater       Date:  2014-08-10       Impact factor: 43.841

2.  Solution-processed organic spin-charge converter.

Authors:  Kazuya Ando; Shun Watanabe; Sebastian Mooser; Eiji Saitoh; Henning Sirringhaus
Journal:  Nat Mater       Date:  2013-05-05       Impact factor: 43.841

3.  Efficient spin filter using multi-terminal quantum dot with spin-orbit interaction.

Authors:  Tomohiro Yokoyama; Mikio Eto
Journal:  Nanoscale Res Lett       Date:  2011-06-22       Impact factor: 4.703

4.  Observation of the inverse spin Hall effect in silicon.

Authors:  Kazuya Ando; Eiji Saitoh
Journal:  Nat Commun       Date:  2012-01-17       Impact factor: 14.919

  4 in total

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