Literature DB >> 16201799

Organic nanodielectrics for low voltage carbon nanotube thin film transistors and complementary logic gates.

Seung-Hyun Hur1, Myung-Han Yoon, Anshu Gaur, Moonsub Shim, Antonio Facchetti, Tobin J Marks, John A Rogers.   

Abstract

We report the implementation of three dimensionally cross-linked, organic nanodielectric multilayers as ultrathin gate dielectrics for a type of thin film transistor device that uses networks of single-walled carbon nanotubes as effective semiconductor thin films. Unipolar n- and p-channel devices are demonstrated by use of polymer coatings to control the behavior of the networks. Monolithically integrating these devices yields complementary logic gates. The organic multilayers provide exceptionally good gate dielectrics for these systems and allow for low voltage, low hysteresis operation. The excellent performance characteristics suggest that organic dielectrics of this general type could provide a promising path to SWNT-based thin film electronics.

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Year:  2005        PMID: 16201799     DOI: 10.1021/ja0553203

Source DB:  PubMed          Journal:  J Am Chem Soc        ISSN: 0002-7863            Impact factor:   15.419


  3 in total

1.  Using nanoscale thermocapillary flows to create arrays of purely semiconducting single-walled carbon nanotubes.

Authors:  Sung Hun Jin; Simon N Dunham; Jizhou Song; Xu Xie; Ji-Hun Kim; Chaofeng Lu; Ahmad Islam; Frank Du; Jaeseong Kim; Johnny Felts; Yuhang Li; Feng Xiong; Muhammad A Wahab; Monisha Menon; Eugene Cho; Kyle L Grosse; Dong Joon Lee; Ha Uk Chung; Eric Pop; Muhammad A Alam; William P King; Yonggang Huang; John A Rogers
Journal:  Nat Nanotechnol       Date:  2013-04-28       Impact factor: 39.213

2.  Device considerations for development of conductance-based biosensors.

Authors:  Kangho Lee; Pradeep R Nair; Adina Scott; Muhammad A Alam; David B Janes
Journal:  J Appl Phys       Date:  2009-05-19       Impact factor: 2.546

3.  Low-voltage self-assembled indium tin oxide thin-film transistors gated by microporous SiO2 treated by H3PO4.

Authors:  Wei Dou; Yuanyuan Tan
Journal:  RSC Adv       Date:  2019-09-27       Impact factor: 3.361

  3 in total

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