Literature DB >> 16196813

Spin relaxation and decoherence of holes in quantum dots.

Denis V Bulaev1, Daniel Loss.   

Abstract

We investigate heavy-hole spin relaxation and decoherence in quantum dots in perpendicular magnetic fields. We show that at low temperatures the spin decoherence time is 2 times longer than the spin relaxation time. We find that the spin relaxation time for heavy holes can be comparable to or even longer than that for electrons in strongly two-dimensional quantum dots. We discuss the difference in the magnetic-field dependence of the spin relaxation rate due to Rashba or Dresselhaus spin-orbit coupling for systems with positive (i.e., GaAs quantum dots) or negative (i.e., InAs quantum dots) g factor.

Year:  2005        PMID: 16196813     DOI: 10.1103/PhysRevLett.95.076805

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  5 in total

1.  Single spins in self-assembled quantum dots.

Authors:  Richard J Warburton
Journal:  Nat Mater       Date:  2013-06       Impact factor: 43.841

2.  A four-qubit germanium quantum processor.

Authors:  Nico W Hendrickx; William I L Lawrie; Maximilian Russ; Floor van Riggelen; Sander L de Snoo; Raymond N Schouten; Amir Sammak; Giordano Scappucci; Menno Veldhorst
Journal:  Nature       Date:  2021-03-24       Impact factor: 69.504

3.  Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.

Authors:  Lada Vukušić; Josip Kukučka; Hannes Watzinger; Georgios Katsaros
Journal:  Nano Lett       Date:  2017-08-21       Impact factor: 11.189

4.  Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor.

Authors:  Joost van der Heijden; Takashi Kobayashi; Matthew G House; Joe Salfi; Sylvain Barraud; Romain Laviéville; Michelle Y Simmons; Sven Rogge
Journal:  Sci Adv       Date:  2018-12-07       Impact factor: 14.136

5.  Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells.

Authors:  Jinling Yu; Shuying Cheng; Yunfeng Lai; Qiao Zheng; Yonghai Chen
Journal:  Nanoscale Res Lett       Date:  2014-03-19       Impact factor: 4.703

  5 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.