Literature DB >> 16195426

Bridging dimensions: demultiplexing ultrahigh-density nanowire circuits.

Robert Beckman1, Ezekiel Johnston-Halperin, Yi Luo, Jonathan E Green, James R Heath.   

Abstract

A demultiplexer is an electronic circuit designed to separate two or more combined signals. We report on a demultiplexer architecture for bridging from the submicrometer dimensions of lithographic patterning to the nanometer-scale dimensions that can be achieved through nanofabrication methods for the selective addressing of ultrahigh-density nanowire circuits. Order log2(N) large wires are required to address N nanowires, and the demultiplexer architecture is tolerant of low-precision manufacturing. This concept is experimentally demonstrated on submicrometer wires and on an array of 150 silicon nanowires patterned at nanowire widths of 13 nanometers and a pitch of 34 nanometers.

Year:  2005        PMID: 16195426     DOI: 10.1126/science.1114757

Source DB:  PubMed          Journal:  Science        ISSN: 0036-8075            Impact factor:   47.728


  9 in total

1.  Quantitative real-time measurements of DNA hybridization with alkylated nonoxidized silicon nanowires in electrolyte solution.

Authors:  Yuri L Bunimovich; Young Shik Shin; Woon-Seok Yeo; Michael Amori; Gabriel Kwong; James R Heath
Journal:  J Am Chem Soc       Date:  2006-12-20       Impact factor: 15.419

2.  Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors.

Authors:  Michael C McAlpine; Habib Ahmad; Dunwei Wang; James R Heath
Journal:  Nat Mater       Date:  2007-04-22       Impact factor: 43.841

3.  Tunable nanowire patterning using standing surface acoustic waves.

Authors:  Yuchao Chen; Xiaoyun Ding; Sz-Chin Steven Lin; Shikuan Yang; Po-Hsun Huang; Nitesh Nama; Yanhui Zhao; Ahmad Ahsan Nawaz; Feng Guo; Wei Wang; Yeyi Gu; Thomas E Mallouk; Tony Jun Huang
Journal:  ACS Nano       Date:  2013-04-09       Impact factor: 15.881

4.  Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing.

Authors:  Lasse Södergren; Patrik Olausson; Erik Lind
Journal:  Nano Lett       Date:  2022-05-12       Impact factor: 12.262

5.  Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%.

Authors:  R A Minamisawa; M J Süess; R Spolenak; J Faist; C David; J Gobrecht; K K Bourdelle; H Sigg
Journal:  Nat Commun       Date:  2012       Impact factor: 14.919

6.  Remote p-type Doping in GaSb/InAs Core-shell Nanowires.

Authors:  Feng Ning; Li-Ming Tang; Yong Zhang; Ke-Qiu Chen
Journal:  Sci Rep       Date:  2015-06-01       Impact factor: 4.379

7.  Polycrystalline nanowires of gadolinium-doped ceria via random alignment mediated by supercritical carbon dioxide.

Authors:  Sang Woo Kim; Jae-Pyoung Ahn
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

8.  Are nanotube architectures more advantageous than nanowire architectures for field effect transistors?

Authors:  Hossain M Fahad; Muhammad M Hussain
Journal:  Sci Rep       Date:  2012-06-27       Impact factor: 4.379

9.  In-situ device integration of large-area patterned organic nanowire arrays for high-performance optical sensors.

Authors:  Yiming Wu; Xiujuan Zhang; Huanhuan Pan; Wei Deng; Xiaohong Zhang; Xiwei Zhang; Jiansheng Jie
Journal:  Sci Rep       Date:  2013-11-29       Impact factor: 4.379

  9 in total

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