Literature DB >> 16090193

Spin polarized tunneling at finite bias.

S O Valenzuela1, D J Monsma, C M Marcus, V Narayanamurti, M Tinkham.   

Abstract

A mesoscopic spin valve is used to determine the dynamic spin polarization of electrons tunneling out of and into ferromagnetic (FM) transition metals at finite voltages. The dynamic polarization of electrons tunneling out of the FM slowly decreases with increasing bias but drops faster and even inverts with voltage when electrons tunnel into it. A free-electron model shows that in the former case electrons originate near the Fermi level of the FM with large polarization whereas in the latter, electrons tunnel into hot electron states for which the polarization is significantly reduced. The change in sign is ascribed to the matching of the electron wave function inside and outside the tunnel barrier.

Entities:  

Year:  2005        PMID: 16090193     DOI: 10.1103/PhysRevLett.94.196601

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  7 in total

1.  Engineering spin propagation across a hybrid organic/inorganic interface using a polar layer.

Authors:  L Schulz; L Nuccio; M Willis; P Desai; P Shakya; T Kreouzis; V K Malik; C Bernhard; F L Pratt; N A Morley; A Suter; G J Nieuwenhuys; T Prokscha; E Morenzoni; W P Gillin; A J Drew
Journal:  Nat Mater       Date:  2010-12-05       Impact factor: 43.841

2.  Thermal spin current from a ferromagnet to silicon by Seebeck spin tunnelling.

Authors:  Jean-Christophe Le Breton; Sandeep Sharma; Hidekazu Saito; Shinji Yuasa; Ron Jansen
Journal:  Nature       Date:  2011-06-29       Impact factor: 49.962

3.  Low-resistance spin injection into silicon using graphene tunnel barriers.

Authors:  O M J van 't Erve; A L Friedman; E Cobas; C H Li; J T Robinson; B T Jonker
Journal:  Nat Nanotechnol       Date:  2012-09-30       Impact factor: 39.213

4.  Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers.

Authors:  O M J van 't Erve; A L Friedman; C H Li; J T Robinson; J Connell; L J Lauhon; B T Jonker
Journal:  Nat Commun       Date:  2015-06-19       Impact factor: 14.919

5.  Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures.

Authors:  M Gurram; S Omar; B J van Wees
Journal:  Nat Commun       Date:  2017-08-15       Impact factor: 14.919

6.  Tuning the interfacial spin-orbit coupling with ferroelectricity.

Authors:  Mei Fang; Yanmei Wang; Hui Wang; Yusheng Hou; Eric Vetter; Yunfang Kou; Wenting Yang; Lifeng Yin; Zhu Xiao; Zhou Li; Lu Jiang; Ho Nyung Lee; Shufeng Zhang; Ruqian Wu; Xiaoshan Xu; Dali Sun; Jian Shen
Journal:  Nat Commun       Date:  2020-05-26       Impact factor: 14.919

7.  Inversion of Spin Signal and Spin Filtering in Ferromagnet|Hexagonal Boron Nitride-Graphene van der Waals Heterostructures.

Authors:  M Venkata Kamalakar; André Dankert; Paul J Kelly; Saroj P Dash
Journal:  Sci Rep       Date:  2016-02-17       Impact factor: 4.379

  7 in total

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