Literature DB >> 16089485

Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.

Jaakko Sormunen1, Juha Riikonen, Marco Mattila, Jouni Tiilikainen, Markku Sopanen, Harri Lipsanen.   

Abstract

Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III--V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs QDs into rings after a growth interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs QD is discussed and a mechanism for dot-to-ring transformation by As/P exchange reactions is proposed.

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Year:  2005        PMID: 16089485     DOI: 10.1021/nl050646v

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  1 in total

1.  Electronic states in GaAs-(Al,Ga)As eccentric quantum rings under nonresonant intense laser and magnetic fields.

Authors:  J A Vinasco; A Radu; E Niculescu; M E Mora-Ramos; E Feddi; V Tulupenko; R L Restrepo; E Kasapoglu; A L Morales; C A Duque
Journal:  Sci Rep       Date:  2019-02-05       Impact factor: 4.379

  1 in total

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