| Literature DB >> 16075097 |
Ujjal K Gautam1, S R C Vivekchand, A Govindaraj, C N R Rao.
Abstract
Two-dimensional nanowalls of GaS and GaSe are obtained by thermal exfoliation around 900 degrees C, and transformed to Ga2O3 and GaN nanowalls upon reaction with air and ammonia respectively at 800 degrees C, while maintaining dimensional integrity.Entities:
Year: 2005 PMID： 16075097 DOI： 10.1039/b506676j
Source DB: PubMed Journal: Chem Commun (Camb) ISSN： 1359-7345 Impact factor: 6.222