Literature DB >> 16021420

Analysis of ALD-processed thin films by ion-beam techniques.

Matti Putkonen1, Timo Sajavaara, Lauri Niinistö, Juhani Keinonen.   

Abstract

This review introduces the possibilities of ion-beam techniques for the analysis of thin films and thin-film structures processed by atomic layer deposition (ALD). The characteristic features of ALD are also presented. The analytical techniques discussed include RBS, NRA and ERDA with its variants, viz. the TOF-ERDA and HI-ERDA. The thin film examples are taken from flat-panel display technology (TFEL structures) and the semiconductor industry (high-k insulators).

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Year:  2005        PMID: 16021420     DOI: 10.1007/s00216-005-3365-3

Source DB:  PubMed          Journal:  Anal Bioanal Chem        ISSN: 1618-2642            Impact factor:   4.142


  1 in total

1.  Structural and Optical Characterization of ZnS Ultrathin Films Prepared by Low-Temperature ALD from Diethylzinc and 1.5-Pentanedithiol after Various Annealing Treatments.

Authors:  Maksymilian Włodarski; Urszula Chodorow; Stanisław Jóźwiak; Matti Putkonen; Tomasz Durejko; Timo Sajavaara; Małgorzata Norek
Journal:  Materials (Basel)       Date:  2019-09-30       Impact factor: 3.623

  1 in total

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