| Literature DB >> 15903877 |
P-F Braun1, X Marie, L Lombez, B Urbaszek, T Amand, P Renucci, V K Kalevich, K V Kavokin, O Krebs, P Voisin, Y Masumoto.
Abstract
We have studied the electron spin relaxation in semiconductor InAs/GaAs quantum dots by time-resolved optical spectroscopy. The average spin polarization of the electrons in an ensemble of p-doped quantum dots decays down to 1/3 of its initial value with a characteristic time T(Delta) approximately 500 ps, which is attributed to the hyperfine interaction with randomly oriented nuclear spins. We show that this efficient electron spin relaxation mechanism can be suppressed by an external magnetic field as small as 100 mT.Year: 2005 PMID: 15903877 DOI: 10.1103/PhysRevLett.94.116601
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161