Spectroscopic evidence for a dinitrogen complex of gallium and estimation of the Ga-N2 bond strength.

Matrix-isolation experiments were performed to study the interaction between Ga atoms and N2 by using Raman and UV/Vis spectroscopies for detection and analysis. It was revealed that a weak complex is formed, for which resonance Raman spectra were obtained. Several overtones were sighted, allowing a rough estimate of the Ga-N2 fragmentation energy to be made (approximately 19 kJ mol(-1)). The excitation profile obtained from the spectra at different laser wavelengths agrees with the UV/Vis spectrum and shows that the complex exhibits an electronic transition at around 410 nm. At the Ga atom, this transition can be described as a 2S<--2P or 2D<--2P excitation, which is red-shifted from its position for free Ga atoms (approximately 340 nm and 270 nm for 2S<--2P and 2D<--2P, respectively) as a result of N2 complexation. The effect of complexation involves, therefore, only slight stabilization of the 2P ground state but relatively strong stabilization of the excited (2)S state. Accordingly, for the Ga atom in its excited 2S state, the Ga-N2 bond energy can be estimated to be around 79 kJ mol(-1).