Laser spectroscopy of Si3C.

The C 1B1<--X 1A1 band system of the potential interstellar species Si3C has been recorded in a silane/acetylene discharge by resonant two-color two-photon ionization spectroscopy. The origin band is located near 24,925 cm-1 (3.09 eV). Several other features in the spectrum are assigned to progressions in the Si-Si stretching modes as well as to sequence and hot band transitions. The assignment was facilitated by ab initio calculations, which also indicate that this is the strongest electronic transition of Si3C in the visible region of the spectrum. Features in the spectrum are broadened considerably (ca. 10 cm-1), and suggest an excited state lifetime of a few picoseconds. Possible reasons for the short-lived nature of the excited state are discussed.