Literature DB >> 15794627

Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si(hkl) surfaces.

Kenji Ohmori1, Y L Foo, Sukwon Hong, J G Wen, J E Greene, I Petrov.   

Abstract

Families of very high-index planes, such as those which bifurcate spontaneously to form a hill-and-valley structure composed of opposing facets, provide natural templates for the directed growth of position-controlled self-organized nanostructures with shapes determined by the facet width ratio R. For example, deposition of a few ML of Ge on Si(173 100 373), corresponding to R(113/517) = 1.7, results in a field of 40-nm-wide Ge nanowires along [72 187] with a uniform period of 60 nm.

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Year:  2005        PMID: 15794627     DOI: 10.1021/nl048340w

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  2 in total

1.  A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates.

Authors:  Zhenyang Zhong; Hua Gong; Yingjie Ma; Yongliang Fan; Zuimin Jiang
Journal:  Nanoscale Res Lett       Date:  2011-04-11       Impact factor: 4.703

2.  Formation of Self-Connected Si0.8Ge0.2 Lateral Nanowires and Pyramids on Rib-Patterned Si(1 1 10) Substrate.

Authors:  Lei Du; Gang Chen; Wei Lu
Journal:  Nanoscale Res Lett       Date:  2017-01-24       Impact factor: 4.703

  2 in total

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