Literature DB >> 15794612

Coulomb oscillations and Hall effect in quasi-2D graphite quantum dots.

J Scott Bunch1, Yuval Yaish, Markus Brink, Kirill Bolotin, Paul L McEuen.   

Abstract

We perform low-temperature electrical transport measurements on gated, quasi-2D graphite quantum dots. In devices with low contact resistances, we use longitudinal and Hall resistances to extract carrier densities of 9.2-13 x 10(12) cm(-2) and mobilities of 200-1900 cm(2)/V.s. In devices with high resistance contacts, we observe Coulomb blockade phenomena and infer the charging energies and capacitive couplings. These experiments demonstrate that electrons in mesoscopic graphite pieces are delocalized over nearly the whole graphite piece down to low temperatures.

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Year:  2005        PMID: 15794612     DOI: 10.1021/nl048111+

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  11 in total

1.  Graphene-Dielectric Integration for Graphene Transistors.

Authors:  Lei Liao; Xiangfeng Duan
Journal:  Mater Sci Eng R Rep       Date:  2010-11-22       Impact factor: 36.214

2.  High-kappa oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors.

Authors:  Lei Liao; Jingwei Bai; Yongquan Qu; Yung-chen Lin; Yujing Li; Yu Huang; Xiangfeng Duan
Journal:  Proc Natl Acad Sci U S A       Date:  2010-03-22       Impact factor: 11.205

3.  Two-dimensional atomic crystals.

Authors:  K S Novoselov; D Jiang; F Schedin; T J Booth; V V Khotkevich; S V Morozov; A K Geim
Journal:  Proc Natl Acad Sci U S A       Date:  2005-07-18       Impact factor: 11.205

4.  Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.

Authors:  Lei Liao; Jingwei Bai; Rui Cheng; Yung-Chen Lin; Shan Jiang; Yu Huang; Xiangfeng Duan
Journal:  Nano Lett       Date:  2010-05-12       Impact factor: 11.189

5.  Sub-100 nm channel length graphene transistors.

Authors:  Lei Liao; Jingwei Bai; Rui Cheng; Yung-Chen Lin; Shan Jiang; Yongquan Qu; Yu Huang; Xiangfeng Duan
Journal:  Nano Lett       Date:  2010-10-13       Impact factor: 11.189

6.  High-speed graphene transistors with a self-aligned nanowire gate.

Authors:  Lei Liao; Yung-Chen Lin; Mingqiang Bao; Rui Cheng; Jingwei Bai; Yuan Liu; Yongquan Qu; Kang L Wang; Yu Huang; Xiangfeng Duan
Journal:  Nature       Date:  2010-09-01       Impact factor: 49.962

7.  Very large magnetoresistance in graphene nanoribbons.

Authors:  Jingwei Bai; Rui Cheng; Faxian Xiu; Lei Liao; Minsheng Wang; Alexandros Shailos; Kang L Wang; Yu Huang; Xiangfeng Duan
Journal:  Nat Nanotechnol       Date:  2010-08-08       Impact factor: 39.213

8.  Single-layer graphene on Al2O3/Si substrate: better contrast and higher performance of graphene transistors.

Authors:  Lei Liao; Jingwei Bai; Yongquan Qu; Yu Huang; Xiangfeng Duan
Journal:  Nanotechnology       Date:  2009-11-30       Impact factor: 3.874

9.  Graphene nanomesh.

Authors:  Jingwei Bai; Xing Zhong; Shan Jiang; Yu Huang; Xiangfeng Duan
Journal:  Nat Nanotechnol       Date:  2010-02-14       Impact factor: 39.213

10.  Study of Electronic Structure, Thermal Conductivity, Elastic and Optical Properties of α, β, γ-Graphyne.

Authors:  Xun Hou; Zhongjing Xie; Chunmei Li; Guannan Li; Zhiqian Chen
Journal:  Materials (Basel)       Date:  2018-01-25       Impact factor: 3.623

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