Large gate modulation in the current of a room temperature single molecule transistor.

We have demonstrated a single molecule field effect transistor (FET) which consists of a redox molecule (perylene tetracarboxylic diimide) covalently bonded to a source and drain electrode and an electrochemical gate. By adjusting the gate voltage, the energy levels of empty molecular states are shifted to the Fermi level of the source and drain electrodes. This results in a nearly 3 orders of magnitude increase in the source-drain current, in the fashion of an n-type FET. The large current increase is attributed to an electron transport mediated by the lowest empty molecular energy level when it lines up with the Fermi level.