Literature DB >> 15697831

Material distribution across the interface of random and ordered island arrays.

G S Kar1, S Kiravittaya, M Stoffel, O G Schmidt.   

Abstract

We grow single and twofold stacked island layers on patterned substrates and investigate the material distribution in and around the patterned area. For both layers a pronounced material depletion region occurs outside the pattern. The material gradients across the planar-patterned interface are symmetric in the first, but highly asymmetric in the second layer. We can describe these phenomena by simulations that take into account the surface curvature for the first and a strain-field modulated surface for the second layer.

Year:  2004        PMID: 15697831     DOI: 10.1103/PhysRevLett.93.246103

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography.

Authors:  F Pezzoli; M Stoffel; T Merdzhanova; A Rastelli; Og Schmidt
Journal:  Nanoscale Res Lett       Date:  2009-06-06       Impact factor: 4.703

2.  Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusion.

Authors:  Ruifan Tang; Kai Huang; Hongkai Lai; Cheng Li; Zhiming Wu; Junyong Kang
Journal:  Nanoscale Res Lett       Date:  2012-06-26       Impact factor: 4.703

3.  Morphological evolution of Ge/Si(001) quantum dot rings formed at the rim of wet-etched pits.

Authors:  Martyna Grydlik; Moritz Brehm; Friedrich Schäffler
Journal:  Nanoscale Res Lett       Date:  2012-10-30       Impact factor: 4.703

  3 in total

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