Literature DB >> 15601033

Origin of apparent critical thickness for island formation in heteroepitaxy.

Yuhai Tu1, J Tersoff.   

Abstract

We find that a continuum model of heteroepitaxy exhibits a sharp crossover with increasing coverage, from planar growth to island formation. The "critical thickness" at which this Stranski-Krastanov transition occurs depends sensitively on misfit strain, with a dependence strikingly similar to that seen experimentally. The initial planar growth occurs because of intermixing of deposited material with the substrate. While the transition is strictly kinetic in nature, it depends only weakly on growth rate. The role of surface segregation is also discussed.

Year:  2004        PMID: 15601033     DOI: 10.1103/PhysRevLett.93.216101

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Direct Determination of 3D Distribution of Elemental Composition in Single Semiconductor Nanoislands by Scanning Auger Microscopy.

Authors:  Semyon S Ponomaryov; Volodymyr O Yukhymchuk; Peter M Lytvyn; Mykhailo Ya Valakh
Journal:  Nanoscale Res Lett       Date:  2016-02-24       Impact factor: 4.703

2.  Modeling of the growth of GaAs-AlGaAs core-shell nanowires.

Authors:  Qian Zhang; Peter W Voorhees; Stephen H Davis
Journal:  Beilstein J Nanotechnol       Date:  2017-02-24       Impact factor: 3.649

3.  Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness.

Authors:  Christopher F Schuck; Simon K Roy; Trent Garrett; Qing Yuan; Ying Wang; Carlos I Cabrera; Kevin A Grossklaus; Thomas E Vandervelde; Baolai Liang; Paul J Simmonds
Journal:  Sci Rep       Date:  2019-12-03       Impact factor: 4.379

  3 in total

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