| Literature DB >> 15528439 |
K J Choi1, M Biegalski, Y L Li, A Sharan, J Schubert, R Uecker, P Reiche, Y B Chen, X Q Pan, V Gopalan, L-Q Chen, D G Schlom, C B Eom.
Abstract
Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500 degrees C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.Year: 2004 PMID： 15528439 DOI： 10.1126/science.1103218
Source DB: PubMed Journal: Science ISSN： 0036-8075 Impact factor: 47.728