Literature DB >> 15525118

Unusual directional dependence of exchange energies in GaAs diluted with Mn: is the RKKY description relevant?

Priya Mahadevan1, Alex Zunger, D D Sarma.   

Abstract

Ferromagnetism in Mn-doped GaAs, the prototypical dilute magnetic semiconductor (DMS), has so far been attributed to hole mediated RKKY-type interactions. First-principles calculations reveal a strong direction dependence of the ferromagnetic (FM) stabilization energy for Mn pairs, a dependence that cannot be explained within RKKY. In the limit of a hostlike hole engineered here where the RKKY model is applicable, the exchange energies are strongly reduced, suggesting that this limit cannot explain the observed ferromagnetism. The dominant contribution stabilizing the FM state is found to be maximal for 110-oriented Mn pairs and minimal for 100-oriented Mn pairs, providing an alternate explanation for magnetism in such materials in terms of energy lowering due to p-d hopping interactions, and offering a new design degree of freedom to enhance FM.

Year:  2004        PMID: 15525118     DOI: 10.1103/PhysRevLett.93.177201

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet.

Authors:  Iriya Muneta; Toshiki Kanaki; Shinobu Ohya; Masaaki Tanaka
Journal:  Nat Commun       Date:  2017-05-22       Impact factor: 14.919

2.  Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor.

Authors:  Iriya Muneta; Shinobu Ohya; Hiroshi Terada; Masaaki Tanaka
Journal:  Nat Commun       Date:  2016-06-28       Impact factor: 14.919

  2 in total

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