Literature DB >> 15525098

Current-induced spin polarization in strained semiconductors.

Y K Kato1, R C Myers, A C Gossard, D D Awschalom.   

Abstract

The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the electrically polarized spins are characterized by a combination of optical and electrical methods. In addition, the dynamics of the current-induced spins are investigated by utilizing electrical pulses generated from a photoconductive switch. These results demonstrate the possibility of a spin source for semiconductor spintronic devices without the use of magnetic materials.

Entities:  

Year:  2004        PMID: 15525098     DOI: 10.1103/PhysRevLett.93.176601

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  12 in total

1.  Spintronics and pseudospintronics in graphene and topological insulators.

Authors:  Dmytro Pesin; Allan H MacDonald
Journal:  Nat Mater       Date:  2012-04-23       Impact factor: 43.841

Review 2.  New perspectives for Rashba spin-orbit coupling.

Authors:  A Manchon; H C Koo; J Nitta; S M Frolov; R A Duine
Journal:  Nat Mater       Date:  2015-09       Impact factor: 43.841

3.  Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer.

Authors:  Ioan Mihai Miron; Gilles Gaudin; Stéphane Auffret; Bernard Rodmacq; Alain Schuhl; Stefania Pizzini; Jan Vogel; Pietro Gambardella
Journal:  Nat Mater       Date:  2010-01-10       Impact factor: 43.841

4.  Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection.

Authors:  Ioan Mihai Miron; Kevin Garello; Gilles Gaudin; Pierre-Jean Zermatten; Marius V Costache; Stéphane Auffret; Sébastien Bandiera; Bernard Rodmacq; Alain Schuhl; Pietro Gambardella
Journal:  Nature       Date:  2011-08-11       Impact factor: 49.962

5.  Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer.

Authors:  T D Skinner; K Olejník; L K Cunningham; H Kurebayashi; R P Campion; B L Gallagher; T Jungwirth; A J Ferguson
Journal:  Nat Commun       Date:  2015-03-31       Impact factor: 14.919

Review 6.  Antiferromagnetic spintronics.

Authors:  T Jungwirth; X Marti; P Wadley; J Wunderlich
Journal:  Nat Nanotechnol       Date:  2016-03       Impact factor: 39.213

7.  Hidden spin-orbital texture at the [Formula: see text]-located valence band maximum of a transition metal dichalcogenide semiconductor.

Authors:  Oliver J Clark; Oliver Dowinton; Mohammad Saeed Bahramy; Jaime Sánchez-Barriga
Journal:  Nat Commun       Date:  2022-07-16       Impact factor: 17.694

8.  Current-induced Orbital and Spin Magnetizations in Crystals with Helical Structure.

Authors:  Taiki Yoda; Takehito Yokoyama; Shuichi Murakami
Journal:  Sci Rep       Date:  2015-07-09       Impact factor: 4.379

9.  Observation of current-induced bulk magnetization in elemental tellurium.

Authors:  Tetsuya Furukawa; Yuri Shimokawa; Kaya Kobayashi; Tetsuaki Itou
Journal:  Nat Commun       Date:  2017-10-16       Impact factor: 14.919

10.  Molecular engineering of Rashba spin-charge converter.

Authors:  Hiroyasu Nakayama; Takashi Yamamoto; Hongyu An; Kento Tsuda; Yasuaki Einaga; Kazuya Ando
Journal:  Sci Adv       Date:  2018-03-23       Impact factor: 14.136

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