Literature DB >> 15524934

Controlled normal and inverse current-induced magnetization switching and magnetoresistance in magnetic nanopillars.

M AlHajDarwish1, H Kurt, S Urazhdin, A Fert, R Loloee, W P Pratt, J Bass.   

Abstract

By combining pairs of ferromagnetic metals with the same or different signs of scattering anisotropies in ferromagnetic-nonmagnetic-ferromagnetic metal nanopillars, we independently invert just the magnetoresistance, just the direction of current-induced magnetization switching, or both together, at room temperature (295 K) and at 4.2 K. In all cases studied, the switching direction is correctly predicted from the net scattering anisotropy of the fixed ferromagnet, including both bulk and interfacial contributions.

Entities:  

Year:  2004        PMID: 15524934     DOI: 10.1103/PhysRevLett.93.157203

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

Authors:  Qi-Kun Huang; Yi Yan; Kun Zhang; Huan-Huan Li; Shishou Kang; Yu-Feng Tian
Journal:  Sci Rep       Date:  2016-11-23       Impact factor: 4.379

  1 in total

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