Literature DB >> 15524819

Resonant states in the electronic structure of the high performance thermoelectrics AgPbmSbTe2+m: the role of Ag-Sb microstructures.

Daniel Bilc1, S D Mahanti, Eric Quarez, Kuei-Fang Hsu, Robert Pcionek, M G Kanatzidis.   

Abstract

Ab initio electronic structure calculations based on gradient corrected density-functional theory were performed on a class of novel quaternary compounds AgPb(m)SbTe(2+m), which were found to be excellent high temperature thermoelctrics with a large figure of merit ZT approximately 2.2 at 800 K. We find that resonant states appear near the top of the valence and bottom of the conduction bands of bulk PbTe when Ag and Sb replace Pb. These states can be understood in terms of modified Te-Ag(Sb) bonds. The electronic structure near the gap depends sensitively on the microstructural arrangements of Ag-Sb atoms, suggesting that large ZT values may originate from the nature of these ordering arrangements.

Entities:  

Year:  2004        PMID: 15524819     DOI: 10.1103/PhysRevLett.93.146403

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  2 in total

1.  Convergence of electronic bands for high performance bulk thermoelectrics.

Authors:  Yanzhong Pei; Xiaoya Shi; Aaron LaLonde; Heng Wang; Lidong Chen; G Jeffrey Snyder
Journal:  Nature       Date:  2011-05-05       Impact factor: 49.962

2.  First-principles study of thermoelectric properties of Mg2Si-Mg2Pb semiconductor materials.

Authors:  Tao Fan; Congwei Xie; Shiyao Wang; Artem R Oganov; Laifei Cheng
Journal:  RSC Adv       Date:  2018-05-09       Impact factor: 4.036

  2 in total

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