| Literature DB >> 15447131 |
Y Kohsaka1, K Iwaya, S Satow, T Hanaguri, M Azuma, M Takano, H Takagi.
Abstract
The spatial variation of electronic states was imaged in the lightly doped Mott insulator Ca(2-x)NaxCuO2Cl2 using scanning tunneling microscopy or spectroscopy. We observed nanoscale domains with a high local density of states within an insulating background. The observed domains have a characteristic length scale of 2 nm (approximately 4-5a, a: lattice constant) with preferred orientations along the tetragonal [100] direction. We argue that such spatially inhomogeneous electronic states are inherent to slightly doped Mott insulators and play an important role for the insulator to metal transition.Entities:
Year: 2004 PMID: 15447131 DOI: 10.1103/PhysRevLett.93.097004
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161