Literature DB >> 15327300

A conjugated polymer pn junction.

Calvin H W Cheng1, Mark C Lonergan.   

Abstract

Dopant counterion diffusion has made the conjugated polymer pn homojunction a challenging target for decades. We report the electrochemical fabrication of a polyacetylene pn homojunction based on internally compensated forms where the dopant counterions are covalently bound to the polymer backbone. After drying under vacuum, the pn junction exhibits diode behavior with the ratio of the forward to reverse current at 2 V being 7. Despite such modest diode behavior, the fabricated pn junction is significant because it demonstrates the utility of internal compensation in the fabrication of metastable interfaces between dissimilarly doped conjugated polymers.

Entities:  

Year:  2004        PMID: 15327300     DOI: 10.1021/ja046880p

Source DB:  PubMed          Journal:  J Am Chem Soc        ISSN: 0002-7863            Impact factor:   15.419


  2 in total

1.  Chemically fixed p-n heterojunctions for polymer electronics by means of covalent B-F bond formation.

Authors:  Corey V Hoven; Huiping Wang; Mark Elbing; Logan Garner; Daniel Winkelhaus; Guillermo C Bazan
Journal:  Nat Mater       Date:  2010-01-31       Impact factor: 43.841

2.  Synthesis of p-and n-type Gels Doped with Ionic Charge Carriers.

Authors:  E Alveroglu; Y Yilmaz
Journal:  Nanoscale Res Lett       Date:  2010-02-05       Impact factor: 4.703

  2 in total

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