Characterization of pore structure in a nanoporous low-dielectric-constant thin film by neutron porosimetry and X-ray porosimetry.

A small-angle neutron scattering (SANS) porosimetry technique is presented for characterization of pore structure in nanoporous thin films. The technique is applied to characterize a spin-on organosilicate low dielectric constant (low-k) material with a random pore structure. Porosimetry experiments are conducted using a "contrast match" solvent (a mixture of toluene-d8 and toluene-h8) having the same neutron scattering length density as that of the nanoporous film matrix. The film is exposed to contrast match toluene vapor in a carrier gas (air), and pores fill with liquid by capillary condensation. The partial pressure of the solvent vapor is increased stepwise from 0 (pure air) to P0 (saturated solvent vapor) and then decreased stepwise to 0 (pure air). As the solvent partial pressure increases, pores fill with liquid solvent progressively from smallest to largest. SANS measurements quantify the average size of the empty pores (those not filled with contrast match solvent). Analogous porosimetry experiments using specular X-ray reflectivity (SXR) quantify the volume fraction of solvent adsorbed at each step. Combining SXR and SANS data yields information about the pore size distribution and illustrates the size dependence of the filling process. For comparison, the pore size distribution is also calculated by application of the classical Kelvin equation to the SXR data.