Literature DB >> 15164056

Electron-hole symmetry in a semiconducting carbon nanotube quantum dot.

Pablo Jarillo-Herrero1, Sami Sapmaz, Cees Dekker, Leo P Kouwenhoven, Herre S J Van Der Zant.   

Abstract

Optical and electronic phenomena in solids arise from the behaviour of electrons and holes (unoccupied states in a filled electron sea). Electron-hole symmetry can often be invoked as a simplifying description, which states that electrons with energy above the Fermi sea behave the same as holes below the Fermi energy. In semiconductors, however, electron-hole symmetry is generally absent, because the energy-band structure of the conduction band differs from the valence band. Here we report on measurements of the discrete, quantized-energy spectrum of electrons and holes in a semiconducting carbon nanotube. By applying a voltage to a gate electrode, an individual nanotube is filled controllably with a precise number of either electrons or holes, starting from one. The discrete excitation spectrum for a nanotube with N holes is strikingly similar to the corresponding spectrum for N electrons. This observation of near-perfect electron-hole symmetry demonstrates that a semiconducting nanotube can be free of charged impurities, even in the limit of few electrons or holes. We furthermore find an anomalously small Zeeman spin splitting and an excitation spectrum indicating strong electron-electron interactions.

Entities:  

Year:  2004        PMID: 15164056     DOI: 10.1038/nature02568

Source DB:  PubMed          Journal:  Nature        ISSN: 0028-0836            Impact factor:   49.962


  12 in total

1.  Electrical addressing of confined quantum systems for quasiclassical computation and finite state logic machines.

Authors:  F Remacle; J R Heath; R D Levine
Journal:  Proc Natl Acad Sci U S A       Date:  2005-04-08       Impact factor: 11.205

2.  Tunable few-electron double quantum dots and Klein tunnelling in ultraclean carbon nanotubes.

Authors:  G A Steele; G Gotz; L P Kouwenhoven
Journal:  Nat Nanotechnol       Date:  2009-04-06       Impact factor: 39.213

3.  Graphene nanoribbons with smooth edges behave as quantum wires.

Authors:  Xinran Wang; Yijian Ouyang; Liying Jiao; Hailiang Wang; Liming Xie; Justin Wu; Jing Guo; Hongjie Dai
Journal:  Nat Nanotechnol       Date:  2011-08-28       Impact factor: 39.213

4.  Gate-controlled generation of optical pulse trains using individual carbon nanotubes.

Authors:  M Jiang; Y Kumamoto; A Ishii; M Yoshida; T Shimada; Y K Kato
Journal:  Nat Commun       Date:  2015-02-27       Impact factor: 14.919

5.  Passivation and characterization of charge defects in ambipolar silicon quantum dots.

Authors:  Paul C Spruijtenburg; Sergey V Amitonov; Filipp Mueller; Wilfred G van der Wiel; Floris A Zwanenburg
Journal:  Sci Rep       Date:  2016-12-06       Impact factor: 4.379

6.  Probing Trions at Chemically Tailored Trapping Defects.

Authors:  Hyejin Kwon; Mijin Kim; Manuel Nutz; Nicolai F Hartmann; Vivien Perrin; Brendan Meany; Matthias S Hofmann; Charles W Clark; Han Htoon; Stephen K Doorn; Alexander Högele; YuHuang Wang
Journal:  ACS Cent Sci       Date:  2019-10-16       Impact factor: 14.553

7.  Direct Synthesis of Multicolor Fluorescent Hollow Carbon Spheres Encapsulating Enriched Carbon Dots.

Authors:  Qiao-Ling Chen; Wen-Qing Ji; Su Chen
Journal:  Sci Rep       Date:  2016-01-25       Impact factor: 4.379

8.  Palladium gates for reproducible quantum dots in silicon.

Authors:  Matthias Brauns; Sergey V Amitonov; Paul-Christiaan Spruijtenburg; Floris A Zwanenburg
Journal:  Sci Rep       Date:  2018-04-09       Impact factor: 4.379

9.  Giant electron-hole transport asymmetry in ultra-short quantum transistors.

Authors:  A C McRae; V Tayari; J M Porter; A R Champagne
Journal:  Nat Commun       Date:  2017-05-31       Impact factor: 14.919

10.  Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors.

Authors:  Maria El Abbassi; Mickael L Perrin; Gabriela Borin Barin; Sara Sangtarash; Jan Overbeck; Oliver Braun; Colin J Lambert; Qiang Sun; Thorsten Prechtl; Akimitsu Narita; Klaus Müllen; Pascal Ruffieux; Hatef Sadeghi; Roman Fasel; Michel Calame
Journal:  ACS Nano       Date:  2020-04-06       Impact factor: 15.881

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