| Literature DB >> 15053568 |
Isaac M Rutenberg1, Oren A Scherman, Robert H Grubbs, Weirong Jiang, Eric Garfunkel, Zhenan Bao.
Abstract
The use of surface-initiated ring-opening metathesis polymerization (SI-ROMP) for producing polymer dielectric layers is reported. Surface tethering of the catalyst to Au or Si/SiO2 surfaces is accomplished via self-assembled monolayers of thiols or silanes containing reactive olefins. Subsequent SI-ROMP of norbornene can be conducted under mild conditions. Pentacene semiconducting layers and gold drain/source electrodes are deposited over these polymer dielectric films. The resulting field effect transistors display promising device characteristics, demonstrating for the first time that SI-ROMP can be used in the construction of organic thin-film electronic devices.Entities:
Year: 2004 PMID: 15053568 DOI: 10.1021/ja035773c
Source DB: PubMed Journal: J Am Chem Soc ISSN: 0002-7863 Impact factor: 15.419