| Literature DB >> 14525272 |
A K Das1, C Pampuch, A Ney, T Hesjedal, L Däweritz, R Koch, K H Ploog.
Abstract
Thin epitaxial films of MnAs--promising candidates for the spin injection into semiconductors--are well known to undergo simultaneously a first-order structural and magnetic phase transition at 10-40 degrees C. The evolution of stress and magnetization of MnAs/GaAs(001), both measured quantitatively with our cantilever beam magnetometer at the coexistence region of alpha-MnAs and beta-MnAs, reveal an orthorhombically distorted unit cell of the ferromagnetic phase, which provides important clues on the origin of ferromagnetism in MnAs.Year: 2003 PMID: 14525272 DOI: 10.1103/PhysRevLett.91.087203
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161